Key facts
- Brand
- Fairchild
- Model
- F109
- Industry
- Industrial
- Documents
- 17
- Languages
- EN
- Last added
- 2012-07-12
Start here
Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
This document provides design specifications for the Fairchild FQA9N90C_F109, an N-channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
Read onlineFairchild F109 specifications
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 9.0 A |
| Pulsed Drain Current | 36 A |
| Total Gate Charge | 45 nC typical |
| Gate-Source Voltage Max | +30 V |
| Operating Temperature Range | -55 to +150 °C |
Source: Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
All Fairchild F109 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet 8 p
- Fairchild Semiconductor FQA9N90_F109 900V N-Channel MOSFET Datasheet 8 p
- Fairchild FQA90N15_F109 N-Channel MOSFET Datasheet 8 p
- Fairchild FQA8N90C_F109 900V N-Channel MOSFET Datasheet 8 p
- Fairchild FQA7N80C_F109 800V N-Channel MOSFET Datasheet 8 p
- Fairchild FQA6N90C_F109 900V N-Channel MOSFET Datasheet 8 p
- FAIRCHILD FQA46N15 FQA46N15_F109 handbook 8 p
- Fairchild FQA13N80_F109 800V N-Channel MOSFET Datasheet 8 p
- Fairchild Semiconductor FQA11N90C_F109 900V N-Channel MOSFET Datasheet 8 p
- FAIRCHILD FQA11N90 FQA11N90_F109 900V N-Channel MOSFET Manual 9 p
- Fairchild Semiconductor FQA10N80C_F109 800V N-Channel MOSFET Datasheet 8 p
- FAIRCHILD FDA16N50 FDA16N50_F109 Manual 9 p
- Fairchild Semiconductor FDA20N50 / FDA20N50_F109 N-Channel MOSFET Datasheet 9 p
- FAIRCHILD FCA47N60/FCA47N60_F109 Manual 9 p
- FAIRCHILD FGA25N120ANTD FGA25N120ANTD_F109 Manual 4 p
- Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet 8 p
- FAIRCHILD FQA9N90C_F109 900V N-Channel MOSFET Guide 8 p
Questions answered in these manuals
What is the maximum single pulsed avalanche energy?
The device can withstand a single pulsed avalanche energy of up to 900 mJ.
From: Fairchild FQA9N90C_F109 900V N-Channel MOSFET Datasheet
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 8.6 A.
From: Fairchild Semiconductor FQA9N90_F109 900V N-Channel MOSFET Datasheet
What is the maximum drain-source voltage?
The maximum drain-source voltage is 900 V.
From: Fairchild Semiconductor FQA9N90_F109 900V N-Channel MOSFET Datasheet
What is the maximum junction temperature rating?
The device has a maximum junction temperature rating of 175°C.
Is this product RoHS compliant?
Yes, the FQA90N15_F109 is RoHS compliant.
What is the typical gate charge of this MOSFET?
The typical gate charge is 35 nC.
From: Fairchild FQA8N90C_F109 900V N-Channel MOSFET Datasheet