Datasheet
The FQA9N90C_F109 900V N-Channel MOSFET is a power field effect transistor with low gate charge, low on-state resistance and fast switching characteristics. It is suitable for high-efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
Datasheet
This document describes the features and characteristics of the FQA9N90_F109 900V N-Channel MOSFET, including parameters such as current, voltage, and switching speed.
Datasheet
FQA90N15_F109 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The device features RDS(on) = 0.018Ω @VGS = 10 V, low gate charge (typical 220nC), low Crss (typical 200pF), fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating, and RoHS compliance.
Datasheet
This document describes the features of the FQA8N90C_F109 900V N-Channel MOSFET, including 8A current, 1.9Ω RDS(on), low gate charge, fast switching, etc.
Datasheet
This document describes the features and characteristics of the FQA7N80C_F109 800V N-Channel MOSFET, including low gate charge, fast switching, and improved dv/dt capability.
Datasheet
This document describes the features and characteristics of the FQA6N90C_F109 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 6A current, 900V voltage, low gate charge and Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.
Datasheet
FQA46N15 is a 150V N-channel MOSFET from Fairchild. Its features are RDS(on) = 0.042 Ω @VGS = 10 V, low gate charge (typ 85 nC), low Crss (typ 100pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating
User Manual
This document describes the features and characteristics of the FQA13N80_F109 800V N-Channel MOSFET product introduced by Fairchild Semiconductor Corporation in 2007, including 12.6A current, 0.75Ω RDS(on), low gate charge, and low Crss.
User Manual
The FQA11N90C_F109 is a 900V N-channel MOSFET that features low gate charge (typical 60 nC), low Crss (typical 23pF), fast switching, 100% avalanche tested, improved dv/dt capability, and RoHS compliance.
User Manual
FQA11N90 / FQA11N90_F109 is a N-Channel MOSFET with a maximum voltage of 900V and a rated current of 11.4A. It features low gate charge, low gate resistance, low gate reverse capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, etc. It is suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
User Manual
This document describes the features and characteristics of the FQA10N80C_F109 800V N-Channel MOSFET, including 10A current, 1.1Ω RDS(on), low gate charge, fast switching, 100% avalanche tested, etc.
User Manual
FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET is a low on-resistance, low gate charge, low Crss, fast switching, 100% avalanche tested N-channel MOSFET.
User Manual
The FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild using its proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
User Manual
FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET is a high performance MOSFET device from Fairchild with outstanding low on-resistance, ultra low gate charge and high voltage capability. This device is very suitable for various AC/DC power conversion applications for system miniaturization and higher efficiency.
User Manual
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT is a NPT Trench Technology, Positive temperature coefficient power transistor from Fairchild Semiconductor Corporation. The product has low saturation voltage, low switching loss and extremely enhanced avalanche capability, which makes it suitable for applications such as induction heating and microwave oven.
