FQA9N90C_F109 900V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor manufactured by Fairchild. This transistor features low gate charge (typical 45 nC), low Crss (typical 14pF), fast switching, 100% avalanche tested, improved dv/dt capability and RoHS compliance.
The FQA9N90C_F109 is a 900 V N‑Channel power MOSFET featuring low gate charge, low output capacitance, and fast switching. It is designed for high‑efficiency switched‑mode power supplies, active power factor correction, and lamp ballast applications.
The datasheet provides absolute maximum ratings, thermal characteristics, electrical parameters, typical performance curves, and mechanical dimensions for the TO‑3PN package, along with ordering information and trademark notices.
| Drain‑Source Voltage (V_DSS) | 900 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 9.0 A |
| Pulsed Drain Current (I_D) (Note 1) | 36 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 280 W |
| Junction‑to‑Case Thermal Resistance | 0.45 °C/W |
| Case‑to‑Sink Thermal Resistance | 0.24 °C/W |
| Junction‑to‑Ambient Thermal Resistance | 40 °C/W |
The MOSFET can withstand up to 900 V between drain and source.
It is rated for a continuous drain current of 9.0 A at 25 °C.
The gate‑source voltage is limited to +30 V.
The device can dissipate up to 280 W at a case temperature of 25 °C.