This document describes the features and characteristics of the FQA10N80C_F109 800V N-Channel MOSFET, including 10A current, 1.1Ω RDS(on), low gate charge, fast switching, 100% avalanche tested, etc.
This document provides the design specifications for the FQA10N80C_F109, an 800V N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe, DMOS technology, the device is optimized for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Key features include a 10A continuous drain current, low gate charge, and fast switching capabilities.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (25°C) | 10 A |
| Continuous Drain Current (100°C) | 6.32 A |
| Pulsed Drain Current | 40 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 920 mJ |
| Power Dissipation (25°C) | 240 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3PN |
The maximum drain-source voltage is 800 V.
The continuous drain current at 25°C is 10 A.
Yes, the device is RoHS compliant.