Key facts
- Brand
- Fairchild
- Model
- FDD86102
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild FDD86102 N-Channel MOSFET Datasheet
Datasheet 6 pages · 391 KB · EN
This document is a technical datasheet for the Fairchild Semiconductor FDD86102, an N-Channel PowerTrench MOSFET. The device features a maximum drain current of 36A at Tj=25°C and operates with a drain-to-source voltage rating of 100V.
Read onlineFairchild FDD86102 specifications
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Power Dissipation (Tc=25°C) | 62 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.0 °C/W |
| Package Type | D-PAK (TO-252) |
All Fairchild FDD86102 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for this MOSFET at room temperature?
The device supports a maximum continuous drain current of 36 A when the case temperature is 25 °C.
What is the maximum power dissipation rating at a junction temperature of 25 °C?
The MOSFET can dissipate up to 62 W when the junction temperature is maintained at 25 °C.