Key facts
- Brand
- Fairchild
- Model
- FDS6679
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
Start here
Fairchild FDS6679 P-Channel MOSFET Datasheet
The document is a technical specification sheet for the Fairchild Semiconductor FDS6679, a 30 Volt P-Channel PowerTrench MOSFET designed to improve efficiency in DC/DC converters and battery chargers. It highlights features such as high performance trench technology for low on-resistance and extended voltage range capabilities.
The datasheet details absolute maximum ratings including drain-source voltage of -30V, continuous drain current of -13A, and operating temperature ranges from -55°C to +175°C. It also provides comprehensive electrical characteristics tables covering off-state breakdown voltages, on-resistance values under various conditions, dynamic capacitance figures, and switching times.
Fairchild FDS6679 specifications
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +25 V |
| Operating Junction Temperature Range | -55 to +175 °C |
All Fairchild FDS6679 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for this MOSFET?
The device supports a continuous drain current of -13 A.
What is the operating junction temperature range?
The component operates between -55 and +175 °C.
What is the typical HBM ESD protection level?
The HBM ESD protection level is 6 kV typical.
From: Fairchild Semiconductor FDS6679AZ P-Channel MOSFET Datasheet
Is the device RoHS compliant?
Yes, the device is RoHS compliant.
From: Fairchild Semiconductor FDS6679AZ P-Channel MOSFET Datasheet