Key facts
- Brand
- Fairchild
- Model
- FQD19N10
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQD19N10/FQU19N10 100V N-Channel MOSFET Datasheet
Datasheet 9 pages · 679 KB · EN
This document provides technical specifications for the FQD19N10 and FQU19N10, which are 15.6A, 100V N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices feature low on-state resistance, superior switching performance, and improved dv/dt capability.
Read onlineFairchild FQD19N10 specifications
| Drain-Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 15.6 A |
| Continuous Drain Current (Tg = 100°C) | 9.8 A |
| Power Dissipation (Ts = 25°C) | 25 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 2.5 °C/W |
Source: Fairchild Semiconductor FQD19N10/FQU19N10 100V N-Channel MOSFET Datasheet
All Fairchild FQD19N10 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the operating and storage temperature ranges for this MOSFET?
The device operates and can be stored within a temperature range of -55 to +150 °C.
From: Fairchild Semiconductor FQD19N10/FQU19N10 100V N-Channel MOSFET Datasheet