This document describes the features and characteristics of the FQA13N80_F109 800V N-Channel MOSFET product introduced by Fairchild Semiconductor Corporation in 2007, including 12.6A current, 0.75Ω RDS(on), low gate charge, and low Crss.
This document is a technical datasheet for the Fairchild Semiconductor FQA13N80_F109, an 800V N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key features include low gate charge (typical 68 nC), low Crss (typical 30pF), fast switching speeds, and 100% avalanche testing. It is designed for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (25°C) | 12.6 A |
| Gate-Source Voltage | +30 V |
| Package Type | TO-3PN |
| Total Gate Charge (Typ) | 68 nC |
The device operates and stores within a temperature range of -55 to +150 °C.
The maximum power dissipation is rated at 300 W when the temperature is 25°C.