FQA46N15 is a 150V N-channel MOSFET from Fairchild. Its features are RDS(on) = 0.042 Ω @VGS = 10 V, low gate charge (typ 85 nC), low Crss (typ 100pF), fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating
This document is a technical datasheet for the Fairchild Semiconductor FQA46N15 / FQA46N15_F109, which is a 150V N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain-Source Voltage (VDSS) | 150 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 50 A |
| On-Resistance (RDS(on)) | 0.042 Ω @VGS = 10 V |
| Maximum Junction Temperature (TJ) | +175 °C |
| Package Type | TO-3PN |
The maximum junction temperature rating is +175 °C.
The typical total gate charge (Qg) is 85 nC.