Key facts
- Brand
- Fairchild
- Model
- FDD5N50NZ
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-07-11
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Fairchild Semiconductor FDD5N50NZ N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FDD5N50NZ, an N-Channel MOSFET designed using proprietary planar stripe DMOS technology. The device features low gate charge and improved dv/dt capability, making it suitable for efficient switching mode power supplies and active power factor correction applications.
The document provides comprehensive electrical characteristics, including maximum ratings such as a 500V drain-to-source voltage and 4A continuous current. It also details thermal resistance values, capacitance parameters, and typical performance curves regarding on-resistance, breakdown voltage, and switching times under various temperature conditions.
Fairchild FDD5N50NZ specifications
| Drain to Source Voltage (V_DSS) | 500 V |
|---|---|
| Gate to Source Voltage (V_GSS) | 425 V |
| Continuous Drain Current (I_D) | 4 A |
| Power Dissipation (T_C = 25°C) | 62 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 2.0 °C/W |
| Package Type | D-PAK |
Source: Fairchild Semiconductor FDD5N50NZ N-Channel MOSFET Datasheet
All Fairchild FDD5N50NZ documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (I_D) is 4 A when the case temperature is 25°C.
From: Fairchild Semiconductor FDD5N50NZ N-Channel MOSFET Datasheet
Is this device RoHS compliant?
Yes, the FDD5N50NZ is listed as RoHS Compliant in the features description.
From: Fairchild Semiconductor FDD5N50NZ N-Channel MOSFET Datasheet
What is the typical on-state resistance of this MOSFET?
The typical RDS(on) is 1.47 Ω when VGS = 10V and ID = 1.85A.
Is this device RoHS compliant?
Yes, the document lists it as RoHS Compliant.
