Key facts
- Brand
- Fairchild
- Model
- FDMS86101
- Category
- Other Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild FDMS86101 N-Channel MOSFET Datasheet
Datasheet 7 pages · 299 KB · EN
This document is a technical datasheet for the Fairchild Semiconductor FDMS86101, an N-Channel PowerTrench MOSFET rated at 100 V, 60 A continuous drain current (package limited), and 8 mΩ on-resistance. The device utilizes advanced packaging to minimize on-state resistance while maintaining superior switching performance.
Read onlineFairchild FDMS86101 specifications
| Drain to Source Voltage (Vds) | 100 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Continuous Drain Current (Package Limited) | 60 A |
| On-Resistance (Typical at Vgs=10V, Id=13A) | 8 mΩ |
| Power Dissipation (Tc = 25°C) | 104 W |
All Fairchild FDMS86101 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What is the maximum continuous drain current for this MOSFET at 25°C?
The maximum continuous drain current is 60 A when the temperature is 25°C.
What is the maximum power dissipation when the case temperature is 25°C?
The maximum power dissipation is 104 W when the case temperature is 25°C.
What are the operating and storage junction temperature ranges for this component?
The MOSFET operates and stores within a range of -55 to +150 °C.
From: Fairchild Semiconductor FDMS86101DC N-Channel MOSFET Datasheet