Fairchild BSS138 Manuals

Key facts

Brand: Fairchild
Model: BSS138
Category: Other Electronics
Documents: 3
Languages: EN
Last added: 2012-07-11

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Fairchild Semiconductor BSS138W N-Channel MOSFET Datasheet

Datasheet 6 pages · 212 KB · EN

This document is a datasheet for the BSS138W, an N-Channel enhancement mode field effect transistor designed for low voltage and low current applications. Key features include a high density cell design for extremely low on-state resistance and a rugged, reliable SOT-323 surface mount package. The device is suitable for applications such as small servo motor control and power MOSFET gate drivers.

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Fairchild BSS138 specifications

Drain-Source Voltage	50 V
Gate-Source Voltage	+20 V
Continuous Drain Current	0.21 A
Pulsed Drain Current	0.84 A
Operating Junction Temperature Range	-55 to +150 °C
Maximum Power Dissipation	340 mW
Thermal Resistance, Junction to Ambient	367 °C/W

Source: Fairchild Semiconductor BSS138W N-Channel MOSFET Datasheet

All Fairchild BSS138 documents by type

Datasheet 3

Ratings, dimensions and ordering codes, for selection and design work.

Questions answered in these manuals

What is the maximum continuous drain current?

The maximum continuous drain current is 0.21 A.

From: Fairchild Semiconductor BSS138W N-Channel MOSFET Datasheet

What is the operating junction temperature range?

The operating and storage junction temperature range is -55 to +150 °C.

From: Fairchild Semiconductor BSS138W N-Channel MOSFET Datasheet

What is the maximum continuous drain current for this transistor?

The maximum continuous drain current is 0.22 A.

From: Fairchild Semiconductor BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet

What is the maximum total device dissipation rating?

The maximum total device dissipation is 350 mW.