This document describes the features and characteristics of the FQA7N80C_F109 800V N-Channel MOSFET, including low gate charge, fast switching, and improved dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FQA7N80C_F109, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The datasheet provides absolute maximum ratings, electrical characteristics including off and on states, dynamic parameters such as capacitance and gate charge, and typical performance characteristics graphs. It also includes mechanical dimensions for the TO-3PN package.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (25°C) | 7.0 A |
| Pulsed Drain Current | 28.0 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 580 mJ |
| Power Dissipation (25°C) | 198 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3PN |
The typical total gate charge (Qg) is 27nC.
It is well suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
Yes, the device is RoHS compliant.