The FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild using its proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild Semiconductor FDA20N50 and FDA20N50_F109 N-Channel enhancement mode power field effect transistors. These devices utilize the company's proprietary planar stripe, DMOS technology and are designed for high efficiency switched mode power supplies and active power factor correction applications. Key features include low gate charge, low output capacitance, and fast switching capabilities.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 22 A |
| Continuous Drain Current (Tj = 100°C) | 13.2 A |
| Pulsed Drain Current | 88 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 1110 mJ |
| Power Dissipation (Tc = 25°C) | 280 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.44 °C/W |
| Total Gate Charge | 45.6 nC (Typ) |
The maximum drain-source voltage is 500 V.
The continuous drain current at 25°C is 22 A.
The operating and storage temperature range is from -55 to +150 °C.