FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET is a low on-resistance, low gate charge, low Crss, fast switching, 100% avalanche tested N-channel MOSFET.
This document provides the design specifications for the FDA16N50 and FDA16N50_F109 N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology and are designed for high-efficient switched mode power supplies and active power factor correction applications. Key features include a 16.5A continuous drain current, 500V drain-source voltage, and low gate charge.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 16.5 A |
| Continuous Drain Current (Tc = 100°C) | 9.9 A |
| Pulsed Drain Current | 66 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 780 mJ |
| Power Dissipation (Tj = 25°C) | 205 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.6 °C/W |
| Total Gate Charge | 32 nC (Typ) |
The FDA16N50 is available in the TO-3P package.
The FDA16N50_F109 is available in the TO-3PN package.
The maximum junction temperature is 150 °C.