Key facts
- Brand
- Fairchild
- Model
- F085
- Industry
- Industrial
- Documents
- 5
- Languages
- JA
- Last added
- 2012-08-01
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FAIRCHILD RURD620CCS9A_F085 handbook
RURD620CCS9A_F085 6A, 200V Ultrafast Dual Diodes are ultrafast dual diodes with soft recovery characteristics (trr < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Read onlineFairchild F085 specifications
| Drain to Source Voltage (VDS) | 60 V |
|---|---|
| Gate to Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) at VGS=10 V | 17 A |
| Power Dissipation (PD) | 1.1 W |
| Input Capacitance (CISS) | 475 pF |
| Output Capacitance (COS) | 198 pF |
Source: Fairchild FDN5632N_F085 N-Channel Logic Level PowerTrench MOSFET Datasheet
All Fairchild F085 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- FAIRCHILD RURD620CCS9A_F085 handbook
- FAIRCHILD AN-8039 Using the FDDS100H06_F085 in Automotive Systems handbook
- FAIRCHILD FAN7171_F085 High-Current High-Side Gate Drive IC handbook
- FAIRCHILD FAN7190_F085 High-Current High handbook
- Fairchild FDN5632N_F085 N-Channel Logic Level PowerTrench MOSFET Datasheet 7 p
Questions answered in these manuals
What is the maximum drain‑to‑source voltage for the FDN5632N_F085 MOSFET?
The maximum drain‑to‑source voltage is 60 V.
From: Fairchild FDN5632N_F085 N-Channel Logic Level PowerTrench MOSFET Datasheet
Is the FDN5632N_F085 MOSFET qualified for automotive use?
Yes, it is qualified to AEC‑Q101 for automotive applications.
From: Fairchild FDN5632N_F085 N-Channel Logic Level PowerTrench MOSFET Datasheet