Key facts
- Brand
- Fairchild
- Model
- FDMS8570S
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild FDMS8570SDC 25V 60A N-Channel MOSFET Datasheet
The document describes the Fairchild Semiconductor FDMS8570SDC, an N-Channel SyncFET produced using PowerTrench technology. It features a dual Cool POQFN package and includes an efficient monolithic Schottky body diode for synchronous rectification applications.
Key electrical characteristics include a maximum drain-to-source voltage of 25V, a continuous drain current of 60A (package limited), and a static on-resistance ranging from 2.4 mΩ to 3.3 mΩ depending on test conditions.
Fairchild FDMS8570S specifications
| Drain to Source Voltage (VDS) | 25 V |
|---|---|
| Gate to Source Voltage (VGS) | 12 V |
| Continuous Body Diode Current (IBD) | 28 A |
| Power Dissipation Ta=25°C | 59 W |
| Operating Junction Temperature Range | -55 to +150 °C |
Source: Fairchild FDMS8570SDC 25V 60A N-Channel MOSFET Datasheet
All Fairchild FDMS8570S documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for this MOSFET?
It is suitable for synchronous rectifiers in DC/DC converters and telecom secondary side rectification.
From: Fairchild FDMS8570SDC 25V 60A N-Channel MOSFET Datasheet
What package type does the FDMS8570SDC use?
The device uses a Dual Cool POQFN package.
From: Fairchild FDMS8570SDC 25V 60A N-Channel MOSFET Datasheet
What are the operating and storage junction temperature limits?
The device operates and stores within a junction temperature range of -55 to +150 °C.
From: Fairchild FDMS8570S N-Channel PowerTrench SyncFET Datasheet
What is the maximum power dissipation at an ambient temperature of 25°C?
The maximum power dissipation is 48 W when the case temperature is 25°C.
From: Fairchild FDMS8570S N-Channel PowerTrench SyncFET Datasheet