The FQA9N90C_F109 900V N-Channel MOSFET is a power field effect transistor with low gate charge, low on-state resistance and fast switching characteristics. It is suitable for high-efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.
This document provides design specifications for the Fairchild FQA9N90C_F109, an N-channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 9.0 A |
| Pulsed Drain Current | 36 A |
| Total Gate Charge | 45 nC typical |
| Gate-Source Voltage Max | +30 V |
| Operating Temperature Range | -55 to +150 °C |
The device can withstand a single pulsed avalanche energy of up to 900 mJ.