Key facts
- Brand
- Fairchild
- Model
- FQPF90N08
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF90N08 80V N-Channel MOSFET Datasheet
The FQPF90N08 is an N‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, fast switching, and high avalanche capability, making it suitable for low‑voltage automotive, DC‑DC converter, and motor‑control applications.
Key electrical specifications include an 80 V drain‑source rating, 44 A continuous drain current at 25 °C, 176 A pulsed current, and an on‑resistance of 0.0162 Ω at VGS = 10 V. The device features low gate charge (84 nC typical) and modest capacitances. It is supplied in a TO‑220F package with a junction temperature limit of 175 °C.
Fairchild FQPF90N08 specifications
| Drain‑Source Voltage (VDS) | 80 V |
|---|---|
| Typical Gate Charge (Qg) | 84 nC |
| Package | TO‑220F |
All Fairchild FQPF90N08 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQPF90N08?
The device is rated for a maximum drain‑source voltage of 80 V.
What is the typical gate charge of this MOSFET?
The typical gate charge is 84 nC.
What is the maximum continuous drain current at 25 °C?
The device can handle a continuous drain current of 44 A at a case temperature of 25 °C.
What is the maximum junction temperature rating?
The MOSFET is rated for a maximum junction temperature of 175 °C.