This document describes the features and characteristics of the FQA9N90_F109 900V N-Channel MOSFET, including parameters such as current, voltage, and switching speed.
This document is a datasheet for the Fairchild Semiconductor FQA9N90_F109, a 900V N-Channel enhancement mode power field effect transistor. The device utilizes the company's proprietary planar stripe, DMOS technology and is designed for applications such as switched mode power supplies, active power factor correction, and electronic lamp ballasts.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 8.6 A |
| Continuous Drain Current (100°C) | 5.45 A |
| Pulsed Drain Current | 34.4 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 900 mJ |
| Power Dissipation (25°C) | 240 W |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.52 °C/W |
| Thermal Resistance, Case-to-Sink | 0.24 °C/W |
| Package Type | TO-3PN |
The maximum continuous drain current at 25°C is 8.6 A.
The maximum drain-source voltage is 900 V.
The operating and storage temperature range is -55 to +150 °C.