Key facts
- Brand
- Fairchild
- Model
- FQI50N06
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQB50N06/FQI50N06 60V N-Channel MOSFET Datasheet
The document describes the FQB50N06 and FQI50N06 devices, which are produced using Fairchild's proprietary planar stripe DMOS technology. These transistors feature low on-state resistance and superior switching performance, making them suitable for automotive applications, DC/DC converters, and power management in portable products.
The datasheet provides absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic parameters such as capacitance and gate charge, and typical characteristic curves. It also includes mechanical dimensions for the D2-PAK package.
Fairchild FQI50N06 specifications
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 50 A |
| Maximum Junction Temperature | +175 °C |
| Total Gate Charge (Typical) | 31 nC |
Source: Fairchild Semiconductor FQB50N06/FQI50N06 60V N-Channel MOSFET Datasheet
All Fairchild FQI50N06 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature rating?
The maximum junction temperature rating is +175°C.
From: Fairchild Semiconductor FQB50N06/FQI50N06 60V N-Channel MOSFET Datasheet
Is this device RoHS compliant?
Yes, the device is RoHS Compliant.
From: Fairchild Semiconductor FQB50N06/FQI50N06 60V N-Channel MOSFET Datasheet
What is the maximum junction temperature rating for these transistors?
The maximum junction temperature rating is 175°C.