This document describes the features of the FQA8N90C_F109 900V N-Channel MOSFET, including 8A current, 1.9Ω RDS(on), low gate charge, fast switching, etc.
This document provides design specifications and electrical characteristics for the FQA8N90C_F109, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key features include a low gate charge of typically 35 nC, low Crss (typically 12pF), fast switching capabilities, and improved dv/dt capability. The datasheet details absolute maximum ratings, electrical characteristics such as breakdown voltage and on-resistance, thermal resistance values, and typical performance curves including capacitance and switching times.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 8.0 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 850 mJ |
| Power Dissipation (25°C) | 240 W |
| Operating Temperature Range | -55 to +150 °C |
The typical gate charge is 35 nC.
Yes, the document states it is RoHS compliant.