Key facts
- Brand
- Fairchild
- Model
- FDA28N50
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild Semiconductor FDA28N50 N-Channel MOSFET Datasheet
This document is a datasheet for the FDA28N50, an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switched mode power supplies and active power factor correction applications.
Read onlineFairchild FDA28N50 specifications
| Drain to Source Voltage | 500 V |
|---|---|
| Package Type | TO-3PN |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 0.4 °C/W |
| Total Gate Charge | 80 nC (Typ.) |
Source: Fairchild Semiconductor FDA28N50 N-Channel MOSFET Datasheet
All Fairchild FDA28N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-to-source voltage rating?
The device has a maximum drain-to-source voltage rating of 500 V.
From: Fairchild Semiconductor FDA28N50 N-Channel MOSFET Datasheet
What is the operating and storage temperature range?
The operating and storage temperature range is from -55 to +150 °C.
From: Fairchild Semiconductor FDA28N50 N-Channel MOSFET Datasheet
What is the operating and storage temperature range?
The device operates and stores within a temperature range of -55 to +150 °C.