FQA11N90 / FQA11N90_F109 is a N-Channel MOSFET with a maximum voltage of 900V and a rated current of 11.4A. It features low gate charge, low gate resistance, low gate reverse capacitance, fast switching, 100% avalanche tested, improved dv/dt capability, etc. It is suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.
This document provides design specifications and electrical characteristics for the FQA11N90 / FQA11N90_F109 series of N-Channel enhancement mode power field effect transistors. Produced using Fairchild's proprietary planar stripe, DMOS technology, these devices feature low on-state resistance and superior switching performance.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 11.4 A |
| Power Dissipation (25°C) | 300 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3P / TO-3PN |
The device operates and can be stored within a temperature range of -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 1000 mJ.