Key facts
- Brand
- Fairchild
- Model
- FDMC86102L
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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Fairchild FDMC86102L N-Channel Power Trench MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor FDMC86102L, an N-Channel Power Trench MOSFET. The device features a maximum on-state resistance of 23 mΩ at Vgs = 10V and Id = 7A, designed to minimize resistance while maintaining superior switching performance.
Read onlineFairchild FDMC86102L specifications
| Drain to Source Voltage (Vdss) | 100 V |
|---|---|
| Continuous Drain Current (Package limited) | 18 A |
| Static Drain to Source On Resistance | 23 mΩ |
| Power Dissipation (Ta = 25 °C) | 41 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
Source: Fairchild FDMC86102L N-Channel Power Trench MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for this MOSFET?
The device supports a maximum continuous drain current of 18 A when the case temperature is 25 °C.
From: Fairchild FDMC86102L N-Channel Power Trench MOSFET Datasheet
What is the maximum power dissipation at a junction temperature of 25 °C?
The maximum power dissipation is 41 W when the junction temperature is maintained at 25 °C.
From: Fairchild FDMC86102L N-Channel Power Trench MOSFET Datasheet
What is the primary application for this MOSFET?
The device is intended for DC-DC switching applications.
From: Fairchild Semiconductor FDMC86102LZ N-Channel MOSFET Datasheet
What is the maximum continuous drain current for this MOSFET at 25°C?
The maximum continuous drain current is 22 A when the temperature is 25°C.
From: Fairchild Semiconductor FDMC86102LZ N-Channel MOSFET Datasheet