FQA90N15_F109 is a N-channel enhancement mode power field effect transistor produced by Fairchild. The device features RDS(on) = 0.018Ω @VGS = 10 V, low gate charge (typical 220nC), low Crss (typical 200pF), fast switching, 100% avalanche tested, improved dv/dt capability, 175°C maximum junction temperature rating, and RoHS compliance.
The document describes the Fairchild FQA90N15_F109, an N-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. Key features include low gate charge (typical 220nC), low Crss (typical 200pF), and fast switching capabilities suitable for high-efficiency switched-mode power supplies.
| Drain-Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (25°C) | 90 A |
| Pulsed Drain Current | 360 A |
| Gate-Source Voltage | +25 V |
| Single Pulsed Avalanche Energy | 1400 mJ |
| Power Dissipation (Tc = 25°C) | 375 W |
| Operating Temperature Range | -55 to +175 °C |
| Package Type | TO-3PN |
The device has a maximum junction temperature rating of 175°C.
Yes, the FQA90N15_F109 is RoHS compliant.