Key facts
- Brand
- Fairchild
- Model
- FQL40N50
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQL40N50 500V N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild Semiconductor Corporation FQL40N50 device. It describes an N-Channel enhancement mode power field effect transistor produced using proprietary planar stripe DMOS technology, tailored to minimize on-state resistance and provide superior switching performance.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including capacitance, gate charge, and thermal response curves. It specifies the device is well suited for high efficiency switch mode power supply, power factor correction, motor drive, and welding machine applications.
Fairchild FQL40N50 specifications
| Continuous Drain Current (TC = 25°C) | 40 A |
|---|---|
| Static Drain-Source On-Resistance (RDS(on)) | 0.11 ℧ @VGS = 10 V |
| Total Gate Charge (Qg) | Typical 155 nC |
| Reverse Transfer Capacitance (Crss) | Typical 95 pF |
| Operating and Storage Temperature Range | -55 to +150 °C |
All Fairchild FQL40N50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the recommended applications for this MOSFET?
The device is well suited for high efficiency switch mode power supply, power factor correction, motor drive and welding machine.
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (TC = 25°C) is 40 A.
What are the operating and storage temperature ranges for this MOSFET?
The device operates and stores within a temperature range of -55 to +150 °C.
What is the maximum single pulsed avalanche energy rating?
The device can withstand a single pulsed avalanche energy of 1800 mJ.