FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT is a NPT Trench Technology, Positive temperature coefficient power transistor from Fairchild Semiconductor Corporation. The product has low saturation voltage, low switching loss and extremely enhanced avalanche capability, which makes it suitable for applications such as induction heating and microwave oven.
This document is a technical datasheet for the Fairchild Semiconductor Corporation FGA25N120ANTD / FGA25N120ANTD_F109, a 1200V NPT Trench IGBT. The device utilizes proprietary trench design and advanced NPT technology to offer superior conduction and switching performances, high avalanche ruggedness, and easy parallel operation.
The datasheet provides comprehensive specifications including absolute maximum ratings for collector-emitter voltage (1200 V), collector current (50 A at 25 °C), and power dissipation. It also details thermal characteristics such as junction-to-case resistance and electrical parameters for the integrated diode, making it suitable for industrial applications like induction heating and microwave ovens.
| Collector-Emitter Voltage (VCE) | 1200 V |
|---|---|
| Gate-Emitter Voltage (VGES) | ± 20 V |
| Collector Current @ TC = 25 °C | 50 A |
| Maximum Power Dissipation @ TC = 25 °C | 312 W |
| Operating Junction Temperature (TJ) | -55 to +150 °C |
This device is well suited for resonant or soft switching applications such as induction heating and microwave ovens.
The maximum collector current is 50 A when the case temperature is 25 °C.
The device operates within a junction temperature range of -55 to +150 °C.