This document describes the features and characteristics of the FQA6N90C_F109 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 6A current, 900V voltage, low gate charge and Crss, fast switching, 100% avalanche tested, and improved dv/dt capability.
This document provides the design specifications for the Fairchild FQA6N90C_F109, a 6A, 900V N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe DMOS technology, the device is designed for high efficiency switched mode power supplies and active power factor correction applications. It features low gate charge, low Crss, and fast switching capabilities.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (25°C) | 6.0 A |
| Continuous Drain Current (100°C) | 3.87 A |
| Pulsed Drain Current | 24.0 A |
| Power Dissipation (25°C) | 198 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-3PN |
The typical gate charge is 30 nC.
Yes, the device is RoHS compliant.
The maximum single pulsed avalanche energy is 650 mJ.