Key facts
- Brand
- Philips
- Model
- BFG590
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG590/BFG590/X NPN 5 GHz Wideband Transistors Datasheet
The document is a product specification datasheet for the Philips BFG590 and BFG590/X, which are NPN silicon planar epitaxial transistors designed for high power gain and low noise figures. These devices are intended for use in MATV/CATV amplifiers and RF communications subscriber equipment operating in the GHz range, suitable for class-A, B, and C amplifiers with either pulsed or continuous drive.
Read onlinePhilips BFG590 specifications
| Collector-base voltage (open emitter) | 20 V |
|---|---|
| Collector-emitter voltage (open base) | 15 V |
| Collector current (DC) | 200 mA |
Source: Philips BFG590/BFG590/X NPN 5 GHz Wideband Transistors Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation for these transistors?
The maximum total power dissipation is 400 mW when the temperature at the soldering point is less than 60 °C.
From: Philips BFG590/BFG590/X NPN 5 GHz Wideband Transistors Datasheet
What is the maximum collector current for these transistors?
The maximum collector current is 200 mA.
From: Philips BFG590/BFG590/X NPN 5 GHz Wideband Transistors Datasheet
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 400 mW when the temperature at the soldering point of the collector pin (Ts) is less than 60 °C.
From: Philips BFG590; BFG590/X NPN 5 GHz Wideband Transistors Datasheet