Key facts
- Brand
- Philips
- Model
- BFG31
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG310W/XR Transistor Product Data Sheet
This document is a product data sheet for the BFG310W/XR, an NPN silicon planar epitaxial transistor designed for high power gain and low noise figure. It features gold metallization for reliability and is housed in a 4-pin dual-emitter SOT343R plastic package.
The device is intended for Radio Frequency (RF) front-end applications in the GHz range, including analog and digital cellular telephones, cordless phones, radar detectors, pagers, and SATV tuners. The datasheet provides quick reference data, pinning information, ordering details, marking codes, limiting values, thermal characteristics, electrical characteristics with graphs, SPICE parameters for simulation, package equivalent circuit components, and application notes.
Philips BFG31 specifications
| Collector-emitter voltage | -15 V |
|---|---|
| DC collector current | -100 mA |
| Total power dissipation | 1 W |
| Transition frequency | 5.0 GHz |
| Maximum unilateral power gain | 12 dB |
| Output voltage | -600 mV |
| Thermal resistance junction to soldering point | 40 K/W |
Source: Philips BFG31 PNP 5 GHz Wideband Transistor Data Sheet
All Philips BFG31 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the intended application for this transistor?
It is intended for RF front end applications in the GHz range, such as cellular telephones, cordless telephones, radar detectors, pagers, and SATV tuners.
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 60 mW when the soldering point temperature is below 145 °C.
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 1 W when the temperature at the soldering point is up to 135 °C.
From: Philips BFG31 PNP 5 GHz Wideband Transistor Data Sheet
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage is 15 V when the base is open.
From: Philips BFG31 PNP 5 GHz Wideband Transistor Data Sheet