Key facts
- Brand
- Philips
- Model
- BLF861
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BLF861A UHF Power LDMOS Transistor Datasheet
This document is a product specification datasheet for the Philips BLF861A, an N-channel enhancement mode lateral D-MOS push-pull transistor designed for broadband operation in the UHF band. The device features high power gain, excellent ruggedness against load mismatch errors, and internal input/output matching optimized for 860 MHz applications.
The datasheet provides quick reference data for RF performance under CW and PAL-BG (TV) class-AB operating conditions at 25°C. It includes limiting values such as a maximum drain-source voltage of 65V and total power dissipation of 318W, along with thermal characteristics like junction-to-mounting-base resistance. Detailed graphs illustrate output capacitance, input impedance, load impedance, power gain, drain efficiency, and intermodulation distortion across the frequency range.
Philips BLF861 specifications
| Output capacitance (Coss) | 40 pF |
|---|---|
| Feedback capacitance (Ciss) | 6 pF |
| Total power dissipation (Ptot) | 318 W |
Source: Philips BLF861A UHF Power LDMOS Transistor Datasheet
All Philips BLF861 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating frequency range?
The transistor is designed for broadband operation in the UHF band, specifically tested at 860 MHz.
What is the maximum drain-source voltage?
The limiting value for the drain-source voltage is a maximum of 65 V.
Is this specification final?
No, this document is a preliminary specification and supplementary data may be published later.
From: Philips BLF861 UHF Power LDMOS Transistor Preliminary Specification
What is the typical power gain at 860 MHz?
The typical power gain is greater than 14 dB at 860 MHz in CW class-AB operation.
From: Philips BLF861 UHF Power LDMOS Transistor Preliminary Specification