Key facts
- Brand
- Philips
- Model
- BLF245
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BLF245B VHF Push-Pull Power MOS Transistor Data Sheet
The document is a product specification datasheet for the Philips BLF245B, a VHF push-pull power MOS transistor. It features high power gain and easy power control, utilizing gold metallization for reliability. The device consists of dual silicon N-channel enhancement mode vertical D-MOS transistors encapsulated in a 4-lead SOT279 balanced flange envelope with a ceramic cap.
Read onlinePhilips BLF245 specifications
| Drain-source voltage (VDS) | 65 V |
|---|---|
| Gate-source voltage (+VGS) | -20 V |
| DC drain current (ID) | 4.5 A |
| Operating frequency (CW, class-B) | 175 MHz |
| Power gain (CW, class-B) | > 14 dB |
Source: Philips BLF245B VHF Push-Pull Power MOS Transistor Data Sheet
All Philips BLF245 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the package type for the BLF245B?
The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope with a ceramic cap.
From: Philips BLF245B VHF Push-Pull Power MOS Transistor Data Sheet
What are the pin assignments for the BLF245B?
Pin 1 and 3 are gates, Pin 2 and 4 are drains, and Pin 5 is the source.
From: Philips BLF245B VHF Push-Pull Power MOS Transistor Data Sheet
What is the package type of the BLF245?
The transistor is encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.
What are the pin assignments for the BLF245?
Pin 1 is drain, Pin 2 is source, Pin 3 is gate, and Pin 4 is source.