Key facts
- Brand
- Philips
- Model
- BFG67
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG67W NPN 8 GHz Wideband Transistor Datasheet
The document describes the BFG67W, BFG67W/X, and BFG67W/XR, which are NPN silicon planar epitaxial transistors designed for wideband applications in the GHz range. These devices are suitable for analog satellite television systems and portable RF communication equipment. They feature gold metallization for reliability and are available in SOT343 and SOT343R plastic packages.
Read onlinePhilips BFG67 specifications
| Collector-base voltage | 20 V |
|---|---|
| Collector-emitter voltage | 10 V |
| Collector current (DC) | 50 mA |
| Total power dissipation | 500 mW |
| Noise figure | 2.2 dB |
Source: Philips BFG67W NPN 8 GHz Wideband Transistor Datasheet
All Philips BFG67 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation for the BFG67W?
The maximum total power dissipation is 500 mW up to a temperature of 85 °C.
From: Philips BFG67W NPN 8 GHz Wideband Transistor Datasheet
What is the maximum collector-base voltage rating for the BFG67W?
The maximum collector-base voltage is 20 V with the emitter open.
From: Philips BFG67W NPN 8 GHz Wideband Transistor Datasheet
What is the maximum collector-emitter voltage for this transistor?
The maximum collector-emitter voltage is 10 V when the base is open.
What is the maximum total power dissipation at a case temperature of 65 °C?
The maximum total power dissipation is 300 mW when the case temperature is 65 °C.