Key facts
- Brand
- Philips
- Model
- BLF246
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BLF246B VHF Push-Pull Power MOS Transistor Datasheet
The document describes the Philips BLF246B, an N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. Key features include high power gain, easy power control, good thermal stability, and gold metallization for excellent reliability.
The datasheet details the device's electrical characteristics, limiting values, and thermal properties. It includes typical performance curves for RF operation in CW class-AB and class-B circuits at 175 MHz, along with a complete list of components required for the recommended test circuit.
Philips BLF246 specifications
| Drain-source voltage (VDS) | 65 V |
|---|---|
| Gate-source voltage (VES) | +20 V |
| Drain current (DC) (ID) | 8 A |
| Junction temperature (Tj) | 200 °C |
Source: Philips BLF246B VHF Push-Pull Power MOS Transistor Datasheet
All Philips BLF246 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the operating frequency range?
The device is designed for large signal applications in the VHF frequency range.
From: Philips BLF246B VHF Push-Pull Power MOS Transistor Datasheet
What package type does the BLF246B use?
It uses an 8-lead SOT161A balanced flange package with a ceramic cap.
From: Philips BLF246B VHF Push-Pull Power MOS Transistor Datasheet
What is the primary application of the BLF246?
It is used for large signal amplifier applications in the VHF frequency range.
What safety precaution is required when handling this device?
The gate-source input must be protected against static discharge during transport or handling.