Key facts
- Brand
- Philips
- Model
- BFQ136
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFQ136 NPN Transistor Datasheet
The document is a product specification datasheet for the Philips BFQ136, an NPN transistor housed in a four-lead SOT122A ceramic package. It features diffused emitter-ballasting resistors and gold sandwich metallization to ensure high reliability and excellent temperature profiles.
The device is primarily intended for use as a final stage in UHF amplifiers. Key electrical characteristics include a maximum collector-emitter voltage of 18 V, a DC collector current capability of up to 600 mA, and a transition frequency (fr) of 4 GHz at 500 MHz.
Philips BFQ136 specifications
| Collector-Emitter Voltage (VCEO) | 18 V |
|---|---|
| DC Collector Current (IC) | 600 mA |
| Total Power Dissipation (Ptot) | 9 W |
| Transition Frequency (fr) | 4.0 GHz |
| Maximum Unilateral Power Gain (Gum) | 12.5 dB |
| Output Voltage (Vo) | 2.5 V |
All Philips BFQ136 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of this transistor?
It is primarily intended for final stages in UHF amplifiers.
What is the maximum total power dissipation rating?
The maximum total power dissipation is 9 W up to a temperature of 100 °C.