Key facts
- Brand
- Philips
- Model
- BFG540
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG540W NPN 9 GHz Wideband Transistor Datasheet
The Philips BFG540W is an NPN silicon planar epitaxial transistor designed for high power gain and low noise figure in the GHz range. It features gold metallization for excellent reliability and is available in SOT343N and SOT343R plastic packages. The device is suitable for RF front-end wideband applications in analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
Read onlinePhilips BFG540 specifications
| Collector-base voltage | 20 V |
|---|---|
| Collector-emitter voltage | 15 V |
| Collector current (DC) | 120 mA |
| Total power dissipation | 500 mW |
| DC current gain (hFE) | 100 to 250 |
| Transition frequency (fT) | 9 GHz |
| Maximum unilateral power gain (GUM) | 16 dB |
| Noise figure (F) | 2.1 dB |
| Thermal resistance (Rth j-s) | 180 K/W |
Source: Philips BFG540W NPN 9 GHz Wideband Transistor Datasheet
All Philips BFG540 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for the BFG540W transistor?
It is used in RF front-end wideband applications such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
From: Philips BFG540W NPN 9 GHz Wideband Transistor Datasheet
What is the maximum collector current for this device?
The maximum DC collector current is 120 mA.
From: Philips BFG540W NPN 9 GHz Wideband Transistor Datasheet
What are the minimum and maximum storage temperatures for this device?
The storage temperature ranges from -65 to +150 °C.
From: Philips BFG540 Series NPN Wideband Transistor Datasheet