Key facts
- Brand
- Philips
- Model
- BFG11W
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG11W/X NPN 2 GHz Power Transistor Datasheet
The Philips BFG11W/X is an NPN silicon planar epitaxial transistor designed for high power gain and efficiency in common-emitter class-AB operation. It is specifically intended for use in handheld radio equipment at 1.9 GHz, such as DECT and PHS systems, and serves as a driver for DCS 1800 applications. The device is encapsulated in a small size, 4-pin dual-emitter SOT343 package with gold metallization to ensure excellent reliability.
Read onlinePhilips BFG11W specifications
| Operating Frequency | 1.9 GHz |
|---|---|
| Collector-Base Voltage | 20 V |
| Collector-Emitter Voltage | 8 V |
| Collector Current | 500 mA |
| Total Power Dissipation | 760 mW |
| Package Type | SOT343 |
Source: Philips BFG11W/X NPN 2 GHz Power Transistor Datasheet
All Philips BFG11W documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for this device?
The maximum DC collector current is 500 mA.
What is the operating temperature range for storage?
The storage temperature range is from -65 °C to +150 °C.
What is the maximum collector current?
The maximum DC collector current is 500 mA.
What is the operating frequency?
The transistor is designed for an operating area of 1.9 GHz.