Key facts
- Brand
- Philips
- Model
- BFG520
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG520 Series NPN 9 GHz Wideband Transistor Datasheet
This datasheet describes the BFG520 series of NPN silicon planar epitaxial transistors intended for use in the GHz range. Key features include high power gain, low noise figure, and a transition frequency of up to 9 GHz. The devices are suitable for applications such as analog and digital cellular telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers.
Read onlinePhilips BFG520 specifications
| Transition frequency (fT) | 9 GHz |
|---|---|
| Maximum unilateral power gain | 19 dB |
| Collector-base voltage (VcBo) | 20 V |
| Total power dissipation | 300 mW |
| DC collector current (Io) | 70 mA |
Source: Philips BFG520 Series NPN 9 GHz Wideband Transistor Data Sheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector-base voltage rating?
The maximum collector-base voltage is 20 V with the emitter open.
From: Philips BFG520 Series NPN 9 GHz Wideband Transistor Datasheet
What is the maximum junction temperature allowed for this device?
The maximum junction temperature is 175 °C.
From: Philips BFG520 Series NPN 9 GHz Wideband Transistor Datasheet
What is the maximum collector-base voltage rating?
The maximum collector-base voltage is 20 V under open emitter conditions.
From: Philips BFG520 Series NPN 9 GHz Wideband Transistor Data Sheet
What is the maximum junction temperature for this device?
The maximum junction temperature is 175 °C.
From: Philips BFG520 Series NPN 9 GHz Wideband Transistor Data Sheet