Key facts
- Brand
- Philips
- Model
- BF908
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-04
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Philips BF908/BF908R Dual-gate MOS-FETs Datasheet
This document is a product specification datasheet for the Philips BF908 and BF908R, which are depletion type field-effect transistors (MOS-FETs). The devices feature high forward transfer admittance and are designed as low noise gain controlled amplifiers suitable for frequencies up to 1 GHz. They are available in plastic microminiature SOT143 or SOT143R packages.
Read onlinePhilips BF908 specifications
| Package type | SOT143 or SOT143R |
|---|---|
| Device type | Depletion type field-effect transistor |
| Max drain-source voltage (BF908) | 12 V |
All Philips BF908 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the typical applications for these transistors?
They are used in VHF and UHF applications with a 12 V supply voltage, such as television tuners and professional communications equipment.
Is the device protected against input voltage surges?
Yes, the transistors are protected by integrated back-to-back diodes between gates and source.
What is the maximum drain-source voltage?
The maximum drain-source voltage is 12 V.
Is this device suitable for high frequency applications?
Yes, it supports low noise gain controlled amplifier operation up to 1 GHz.