Key facts
- Brand
- Philips
- Model
- BFG92A
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG92A/X NPN 5 GHz Wideband Transistor Datasheet
The document describes the Philips BFG92A/X, an NPN 5 GHz wideband transistor housed in a dual-emitter SOT143B plastic package. Key features include high power gain, low noise figure, and gold metallization for excellent reliability. It is intended for wideband applications within the UHF and microwave frequency ranges.
Read onlinePhilips BFG92A specifications
| Collector-base voltage (VcBo) | 20 V |
|---|---|
| Collector-emitter voltage (VcEO) | 15 V |
| Collector current (DC) (Ic) | 25 mA |
| Total power dissipation (Prot) | 400 mW |
Source: Philips BFG92A/X NPN 5 GHz Wideband Transistor Datasheet
All Philips BFG92A documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 400 mW when the temperature at the soldering point of the collector pin is below 60 °C.
From: Philips BFG92A/X NPN 5 GHz Wideband Transistor Datasheet
What is the maximum DC collector current rating?
The maximum DC collector current is 25 mA.
From: Philips BFG92A/X NPN 5 GHz Wideband Transistor Datasheet
What are the storage temperature limits?
The device can be stored between -65 °C and 150 °C.
From: Philips BFG92A/X NPN 5 GHz Wideband Transistor Datasheet
What is the maximum total power dissipation for this transistor?
The maximum total power dissipation is 400 mW when the temperature is below 60 °C.
From: Philips BFG92A/X NPN 5 GHz Wideband Transistor Datasheet