Key facts
- Brand
- Philips
- Model
- BFG505
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG505/BFG505/X NPN Transistor Datasheet
The document is a product specification sheet for the BFG505 and BFG505/X devices. These are NPN silicon planar epitaxial transistors housed in a 4-pin dual-emitter SOT 143B plastic package.
Key features highlighted include high power gain, low noise figure, and high transition frequency up to 9 GHz. Gold metallization is used to ensure excellent reliability. The devices are designed for applications in the GHz range, including analog and digital cellular telephones, cordless phones, radar detectors, pagers, and satellite TV tuners.
Philips BFG505 specifications
| Collector-base voltage (VcBo) | 20 V |
|---|---|
| Collector-emitter voltage (Voces) | 15 V |
| DC current gain (hFE) min. | 60 |
All Philips BFG505 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the package type for the BFG505?
The transistor is an NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT 143B plastic package.
What is the maximum junction temperature?
The maximum junction temperature is 175 °C.