Key facts
- Brand
- Philips
- Model
- BFG10
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG10W/X UHF Power Transistor Datasheet
This document is a product specification datasheet for the Philips BFG10W/X, an NPN silicon planar epitaxial UHF power transistor. The device features gold metallization for reliability and comes in a 4-pin SOT343 plastic package.
The datasheet provides quick reference data for RF performance at 900 MHz and 1.9 GHz under pulsed class-AB operation, along with limiting values and thermal characteristics. It also includes application information with test circuit diagrams for both operating frequencies.
Philips BFG10 specifications
| Package Type | 4-pin SOT343 plastic package |
|---|---|
| Collector-Base Voltage (Max) | 20 V |
| Collector-Emitter Voltage (Max) | 10 V |
| Emitter-Base Voltage (Max) | 2.5 V |
| Collector Current (DC) (Max) | 250 mA |
| Total Power Dissipation (Max) | 400 mW |
| Operating Frequency Range | 900 MHz and 1.9 GHz |
All Philips BFG10 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation?
The maximum total power dissipation is 400 mW when the temperature at the soldering point (Ts) is up to 102 °C.
What package does this transistor use?
The BFG10W/X is encapsulated in a plastic, 4-pin SOT343 package.
What is the operating frequency of the BFG10 transistor?
The transistor is designed for operation up to 2 GHz.
From: Philips BFG10; BFG10/X NPN 2 GHz RF Power Transistor Data Sheet
In what package is the BFG10/X available?
It is available in a 4-pin SOT143 plastic package.
From: Philips BFG10; BFG10/X NPN 2 GHz RF Power Transistor Data Sheet