This document describes the features of the NPN 5 GHz wideband transistors BFG590 and BFG590/X, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. They are suitable for use in MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range, ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.
The document is a product specification datasheet for the Philips BFG590 and BFG590/X, which are NPN silicon planar epitaxial transistors designed for high power gain and low noise figures. These devices are intended for use in MATV/CATV amplifiers and RF communications subscriber equipment operating in the GHz range, suitable for class-A, B, and C amplifiers with either pulsed or continuous drive.
| Collector-base voltage (open emitter) | 20 V |
|---|---|
| Collector-emitter voltage (open base) | 15 V |
| Collector current (DC) | 200 mA |
The maximum total power dissipation is 400 mW when the temperature at the soldering point is less than 60 °C.
The maximum collector current is 200 mA.
The maximum collector-base voltage is 20 V.