This document is a product specification datasheet for the Philips BFG590 and BFG590/X, which are NPN silicon planar epitaxial transistors. These devices are designed as 5 GHz wideband transistors with high power gain and low noise figures, suitable for use in MATV/CATV amplifiers and RF communications subscriber equipment. They are available in a 4-pin dual-emitter SOT 143B plastic package.
| Collector-base voltage (open emitter) | 20 V |
|---|---|
| Collector-emitter voltage (open base) | 15 V |
| Collector current (DC) | 200 mA |
The maximum total power dissipation is 400 mW when the temperature at the soldering point of the collector pin (Ts) is less than 60 °C.