Key facts
- Brand
- Philips
- Model
- BFG11
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
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Philips BFG11/BFG11/X NPN RF Power Transistor Datasheet
Datasheet 12 pages · 61 KB · EN
This datasheet describes the BFG11 and BFG11/X, which are NPN silicon planar epitaxial transistors designed for common emitter class-AB operation. These devices feature high power gain and efficiency with a small size discrete power amplifier design encapsulated in a 4-pin dual-emitter SOT 143 package.
The document provides detailed technical specifications including limiting values, thermal characteristics, and electrical parameters such as collector capacitance and DC current gain. It also includes application information for RF performance at 1.9 GHz, SPICE model parameters, and test circuit details.
Philips BFG11 specifications
| Operating Frequency | 1.9 GHz |
|---|---|
| Package Type | SOT 143 |
| Collector-Base Voltage (Max) | 20 V |
| Collector-Emitter Voltage (Max) | 8 V |
| Emitter-Base Voltage (Max) | 2.5 V |
| Collector Current (DC) (Max) | 500 mA |
| Storage Temperature Range | -65 to +150 °C |
Source: Philips BFG11/BFG11/X NPN RF Power Transistor Datasheet
All Philips BFG11 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.