This data sheet introduces the features and characteristics of the BFG520/X/XR model NPN 9GHz wideband transistor products, including high power gain, low noise figure, and high transition frequency. The product is suitable for applications in the GHz range of the RF front end, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fiber-optic systems.
This datasheet describes the BFG520 series of NPN silicon planar epitaxial transistors intended for use in the GHz range. Key features include high power gain, low noise figure, and a transition frequency of up to 9 GHz. The devices are suitable for applications such as analog and digital cellular telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers.
| Collector-base voltage (VCBO) | 20 V |
|---|
The maximum collector-base voltage is 20 V with the emitter open.
The maximum junction temperature is 175 °C.