This document describes the features and characteristics of the BFG520 series NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency. They are intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fibre-optic systems.
This document is a product specification datasheet for the Philips BFG520 series of NPN silicon planar epitaxial transistors. These devices are intended for use in the RF frontend within the GHz range, supporting applications such as analog and digital cellular telephones, cordless phones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fibre-optic systems.
| Transition frequency (fT) | 9 GHz |
|---|---|
| Maximum unilateral power gain | 19 dB |
| Collector-base voltage (VcBo) | 20 V |
| Total power dissipation | 300 mW |
| DC collector current (Io) | 70 mA |
The maximum collector-base voltage is 20 V under open emitter conditions.
The maximum junction temperature is 175 °C.