The document is a product specification sheet for the BFG505 and BFG505/X devices. These are NPN silicon planar epitaxial transistors housed in a 4-pin dual-emitter SOT 143B plastic package.
Key features highlighted include high power gain, low noise figure, and high transition frequency up to 9 GHz. Gold metallization is used to ensure excellent reliability. The devices are designed for applications in the GHz range, including analog and digital cellular telephones, cordless phones, radar detectors, pagers, and satellite TV tuners.
| Collector-base voltage (VcBo) | 20 V |
|---|---|
| Collector-emitter voltage (Voces) | 15 V |
| DC current gain (hFE) min. | 60 |