This document is a product specification datasheet for the Philips BFG505 and BFG505/X, which are NPN silicon planar epitaxial transistors designed for high-frequency applications up to 9 GHz. The devices are housed in a 4-pin dual-emitter SOT 143B plastic package and feature gold metallization for reliability. They are intended for use in the front ends of analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite TV tuners.
| Collector-base voltage | 20 V |
|---|---|
| Collector-emitter voltage | 15 V |
| Collector current (DC) | 18 mA |
| Total power dissipation | 150 mW |
| DC current gain | 60 to 250 |
| Transition frequency | 9 GHz |
| Maximum unilateral power gain | 20 dB |
| Noise figure | 1.2 to 1.9 dB |
The transistor is an NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT 143B plastic package.
The maximum junction temperature is 175 °C.