Key facts
- Brand
- Philips
- Model
- BFT93W
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-09
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Philips BFT93W PNP Transistor Datasheet
This document is a product specification datasheet for the Philips BFT93W, a silicon PNP transistor designed for wideband applications up to 4 GHz. The device features gold metallization for reliability and comes in an SOT323 (S-mini) plastic package.
The datasheet provides comprehensive electrical characteristics including DC current gain, transition frequency, maximum unilateral power gain, and noise figure under various conditions. It also details limiting values such as collector-base voltage, total power dissipation up to 93 °C, and junction temperature limits.
Philips BFT93W specifications
| Package type | SOT323 (S-mini) |
|---|---|
| Transistor type | Silicon PNP transistor |
| Collector-base voltage (VcBo) | -15 V |
| Collector-emitter voltage (VcEo) | -12 V |
| Collector current (Ic) | -50 mA |
| Total power dissipation (Ptot) | 300 mW |
| Transition frequency (ft) | 4 GHz |
| Maximum unilateral power gain (Gum) | 15.5 dB |
All Philips BFT93W documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum junction temperature?
The maximum junction temperature (Tj) is 150 °C.
Is this transistor suitable for frequencies up to 4 GHz?
Yes, it is a PNP 4 GHz wideband transistor intended as a general purpose PIN transistor for wideband applications up to 2 GHz.